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Epitaxy Semiconductor Engineering
The power consumed in a device is composed of two types – dynamic sometimes called switching power and static sometimes called leakage power In geometries smaller than 90nm leakage power has become the dominant consumer of power whereas for larger geometries switching is the larger contributor Power reduction strategies can be used to minimize both.
Threedimensional integrated circuit Wikipedia
A threedimensional integrated circuit (3D IC) is a MOS (metaloxide semiconductor) integrated circuit (IC) manufactured by stacking silicon wafers or dies and interconnecting them vertically using for instance throughsilicon vias (TSVs) or CuCu connections so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint.
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Epitaxy is a method to grow or deposit monocrystalline films on a structure or surface There are two types of epitaxyhomoepitaxy and heteroepitaxy Homoepitaxy is a process in which a film is grown on a substrate of the same composition Heteroepitaxy is a film that is grown on a substrate which has a different composition » read more.
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(PDF) A K.SawhneyA and Electronic course in Electrical
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Power Consumption Semiconductor Engineering
A KSawhneyA course in Electrical and Electronic Measurements and Instrumentation.
